# Xiao-An Fu

Assoc Professor

Professor

Xiao-An (Sean) Fu is an Associate Professor of Chemical Engineering at the University of Louisville. He received his Ph.D. degree in Chemical Engineering from Case Western Reserve University. He was a researcher in the Department of Electrical Engineering and Computer Science at Case Western Reserve University before he joined the faculty of the University of Louisville in 2008. He was a key contributor to a number of research projects funded by DARPA and NASA including SiC MEMS and SiC JFET-based integrated circuits for high temperature applications. He invented a process for deposition of low stress polycrystalline SiC suitable as MEMS structure materials. His current research interests include chemical microsensors, microreactors, breath analysis for development of a noninvasive diagnostic tool for detection of early lung cancer, trace gas detection, active tuberculosis and other pulmonary diseases, analysis of neurotransmitter, and advanced semiconductor thin films for integrated circuit and solar cell applications. He has published more than 60 papers in refereed journals and conference proceedings. He has received three U.S. patents. Dr. Fu was a recipient of a visiting scholarship from the Chinese Academy of Sciences.

### Education

• Ph.D. in Chemical Engineering, Case Western Reserve University, 2001
• M.S. in Chemical Engineering, The Chinese Academy of Science, 1989
• B.S. in Chemical Engineering, Jiangxi Polytechnic University, 1986

### Publications

550 degrees C integrated logic circuits using 6H-SiC JFETs- 2012

This letter reports the design, fabrication, and electrical characteristics of inverter, nand, and nor logic circuits using 6H-silicon carbide (SiC) depletion-mode junction field-effect transistors. All circuits function with high performance at temperatures from 25 ${\circ}\hbox{C}$ to 550 ${\circ}\hbox{C}$. The core inverter has an outstanding dc characteristic transfer function with a steep slope, including a gain of $-$ 20 up to 500 ${\circ}\hbox{C}$, and a logic threshold that is well centered in the logic swing. nor and nand gates were likewise tested in this temperature range, and dynamic characteristics are presented. This SiC technology provides a platform for applications demanding reliable digital circuits at temperatures higher than 300 ${\circ}\ hbox{C}$, well beyond the capability of silicon technology. 2012 IEEE.